bas40-ht3 to bas40-06-ht3 document number 85688 rev. 1.5, 15-apr-05 vishay semiconductors www.vishay.com 1 1 2 3 bas40-ht3 1 2 3 bas40-05-ht3 top view 1 2 3 bas40-06-ht3 1 2 3 bas40-04-ht3 top view 17008 pin 1 top view small signal schottky diodes, single & dual features ? these diodes feature very low turn-on voltage and fast switching. these devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. space saving llp package lead (pb)-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec mechanical data case: llp75-3b plastic case molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: approx. 5.2 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified part ordering code marking remarks bas40-ht3 bas40-ht3-gs08 43 tape and reel bas40-04-ht3 BAS40-04-HT3-GS08 44 tape and reel bas40-05-ht3 bas40-05-ht3-gs08 45 tape and reel bas40-06-ht3 bas40-06-ht3-gs08 46 tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm 40 v forward continuous current t amb = 25 c i f 200 ma surge forward current t p < 1 s, t amb = 25 c i fsm 600 ma power dissipation t amb = 25 c p tot 200 mw parameter test condition symbol value unit thermal resistance junction to ambient air r thja 430 c/w junction temperature t j 125 c storage temperature range t s - 55 to +125 c e3
www.vishay.com 2 document number 85688 rev. 1.5, 15-apr-05 bas40-ht3 to bas40-06-ht3 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified package dimensions in mm (inches) parameter test condition symbol min ty p. max unit reverse breakdown voltage i r = 10 a (pulsed) v (br) 40 v leakage current pulse test v r = 30 v, t p < 300 si r 20 100 na forward voltage pulse test t p < 300 s, i f = 1.0 ma v f 380 mv pulse test t p < 300 s, i f = 40 ma, v f 1000 mv diode capacitance v r = 0 v, f = 1 mhz c tot 4.0 5 pf reverse recovery time i f = 10 ma, i r = 10 ma, i rr = 1 ma, r l = 100 ? t rr 5ns 18057 1.6 (0.062) 1.6 (0.062) 1 (0.039) 0.4 (0.016) 0.3 (0.012) 12 3 0.25 (0.010) 0.3 (0.012) 1 (0.039) 0.7 (0.027) 0.15 (0.006) top view iso method e
bas40-ht3 to bas40-06-ht3 document number 85688 rev. 1.5, 15-apr-05 vishay semiconductors www.vishay.com 3 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
